Test structure on the base of SiO2 stripes height 0.1µm grating on the silicon wafer. Ion implantation by boron with E=100 keV, annealing and SiO2 layer etching was employed.
On the resulting structure following images were obtained: Fig. 1 - Topography of test structure (contact mode AFM), Fig. 2. - Contact SCM image of the same area.