Gallium Arsenide

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Deposition GaAs on polycrystalline substrate (Al₂O₃)in CVD.

The sample was kindly given by Ciplenkov I.N., ОАО “Elma”

Gallium Arsenide

size: 50x50 um
SPM principle: Intermittent contact mode

Deposition GaAs on polycrystalline substrate (Al₂O₃)in CVD.
The sample was kindly given by Ciplenkov I.N., ОАО “Elma&rdquo
size: 50x50 um
SPM principle: Intermittent contact mode

GaAs nanowhiskers

SCCM Studies of Microsctructure

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