Monolayer steps on the Si surface
+1-480-493-0093

Monolayer steps on the Si surface

MDT-file: Download
Monolayer steps, 0.14 nm high, on the Si (001) surface after growing a very thin homoepitaxial surface at room temperature. Surface pits arise from impurity effects. Semi-contact image.
Image and sample courtesy of Dr. Jerry Floro, University of Virginia, USA

monolayer-steps-on-the-si-surface-1
monolayer-steps-on-the-si-surface-1
Topography

size: 5x5x0.0045 um
SPM principle: Intermittent contact mode
si_low_t_buffer3
Monolayer steps on the Si surface
Monolayer steps, 0.14 nm high, on the Si (001) surface after growing a very thin homoepitaxial surface at room temperature. Surface pits arise from impurity effects. Semi-contact image.
Image and sample courtesy of Dr. Jerry Floro, University of Virginia, USA

SPM principle: Amplitude modulation AFM
Have more questions? Contact us
or fulfill a form and we will answer all your questions.