Etched Ge(Si) islands
+1-480-493-0093

Etched Ge(Si) islands

Ge (Si) islands of 30 monolayers grown by MBE at 750 ° C on a Si (001) substrate and etched for 6 min in HF + H2O2 + CH3COOH
Device: NTEGRA Aura
Image Courtesy: Dr. Mikhail Shaleev, IPM RAS

r1043_6_min_hf_h2o2_ch3cooh_rt-110-3x3_mkm
r1043_6_min_hf_h2o2_ch3cooh_rt-110-3x3_mkm
Etched Ge(Si) islands

size: 3x3 um
SPM principle: Amplitude modulation AFM
Si buffer on Si substrate
Ge Defects
Have more questions? Contact us
or fulfill a form and we will answer all your questions.
Ask an Expert