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Surface of Si(111)

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Spiral stage on the surface of Si(111) formed as the result of a beat of the screw dislocation, and 2D negative islands (depth — 0.31 nm; lateral sizes — tens of nanometer) after thermal annealing of the silicon in oxygen atmosphere.

Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia


surface_si_111_n300
surface_si_111_n300
Surface of Si(111)


size: 17x17x0.008 um
SPM principle: Intermittent contact mode
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