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Monolayer steps on the Si surface

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Monolayer steps, 0.14 nm high, on the Si (001) surface after growing a very thin homoepitaxial surface at room temperature. Surface pits arise from impurity effects. Semi-contact image.

Image and sample courtesy of Dr. Jerry Floro, University of Virginia, USA


si_low_t_buffer3_n300
si_low_t_buffer3_n300
Monolayer steps on the Si surface


size: 5x5x0.0045 um
SPM principle: Intermittent contact mode
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