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GaAs atomic steps

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AFM image of multiple epitaxially grown GaAs layers on Silicon substrate.

3x3 median averaged images. The result is concerned with critical resolution, since it was acquired with a 79 um piezo scanner, and the microscope was placed at the first (not ground!) floor of a building, without antivibration control devices.

Acquired by Marco Salerno.
Sample courtesy Vittorianna Tasco, INFM-NNL Lecce, Italy


gaas_300
gaas_300
GaAs atomic steps


size: 3x3x0.0025 um
SPM principle: Intermittent contact mode
gaas_300a
AFM. Semicontact mode. Phase imaging


size: 3x3x0.0025 um
SPM principle: Intermittent contact mode
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